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Title: Numerical investigations on hot-zone modified DS furnace for mc-Si growth process

Abstract

A transient global numerical model has been carried out to simulate the multi-crystalline silicon growth process by the directional solidification method using CGSim 15.1. A two dimensional axisymmetric model was used. The conductive, convective, and radiative heat transfer problems were coupled with our model and these problems were solved iteratively using the finite volume method. In the present work we have modified the heater element to produce a high quality ingot from multi-crystalline silicon. The change has been made to control the temperature distribution. By controlling the temperature distribution, we can also control the melt crystal interface of the ingot. The shape of the melt-crystal interface of the ingot, the temperature distribution in the crucible and the heat flux from the melt as well as from the crystal have been studied. Finally, the simulation results show that the modification in the heater element keeps the melt-crystal interface as planar in the DS system, also it gives better results than conventional system.

Authors:
; ;
Publication Date:
OSTI Identifier:
22608797
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1731; Journal Issue: 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AXIAL SYMMETRY; CRUCIBLES; CRYSTAL GROWTH; CRYSTALS; FURNACES; HEAT; HEAT FLUX; HEAT TRANSFER; INTERFACES; ITERATIVE METHODS; MODIFICATIONS; POLYCRYSTALS; SILICON; SIMULATION; SOLIDIFICATION; TEMPERATURE DISTRIBUTION; TRANSIENTS; TWO-DIMENSIONAL CALCULATIONS

Citation Formats

Sanmugavel, S., Srinivasan, M., Aravinth, K., and Ramasamy, P., E-mail: ramasamyp@ssn.edu.in. Numerical investigations on hot-zone modified DS furnace for mc-Si growth process. United States: N. p., 2016. Web. doi:10.1063/1.4948054.
Sanmugavel, S., Srinivasan, M., Aravinth, K., & Ramasamy, P., E-mail: ramasamyp@ssn.edu.in. Numerical investigations on hot-zone modified DS furnace for mc-Si growth process. United States. https://doi.org/10.1063/1.4948054
Sanmugavel, S., Srinivasan, M., Aravinth, K., and Ramasamy, P., E-mail: ramasamyp@ssn.edu.in. 2016. "Numerical investigations on hot-zone modified DS furnace for mc-Si growth process". United States. https://doi.org/10.1063/1.4948054.
@article{osti_22608797,
title = {Numerical investigations on hot-zone modified DS furnace for mc-Si growth process},
author = {Sanmugavel, S. and Srinivasan, M. and Aravinth, K. and Ramasamy, P., E-mail: ramasamyp@ssn.edu.in},
abstractNote = {A transient global numerical model has been carried out to simulate the multi-crystalline silicon growth process by the directional solidification method using CGSim 15.1. A two dimensional axisymmetric model was used. The conductive, convective, and radiative heat transfer problems were coupled with our model and these problems were solved iteratively using the finite volume method. In the present work we have modified the heater element to produce a high quality ingot from multi-crystalline silicon. The change has been made to control the temperature distribution. By controlling the temperature distribution, we can also control the melt crystal interface of the ingot. The shape of the melt-crystal interface of the ingot, the temperature distribution in the crucible and the heat flux from the melt as well as from the crystal have been studied. Finally, the simulation results show that the modification in the heater element keeps the melt-crystal interface as planar in the DS system, also it gives better results than conventional system.},
doi = {10.1063/1.4948054},
url = {https://www.osti.gov/biblio/22608797}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1731,
place = {United States},
year = {Mon May 23 00:00:00 EDT 2016},
month = {Mon May 23 00:00:00 EDT 2016}
}