Test results of a counting type SOI device for a new x-ray area detector

Journal Article · Wed Jul 27 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4952903· OSTI ID:22608414

Igarashi, N.; Kumai, R.; Kishimoto, S. ^[1]; Arai, Y.; Miyoshi, T. ^[2]

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1. Inst. of Materials Structure Science, KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)
2. Inst. of Particle and Nuclear Physics. KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)

Development of a new detector using Silicon-On-Insulator (SOI) technology has been started in the Photon Factory, KEK. The aim of this project is to develop a pulse-counting-type X-ray detector that can be used in synchrotron radiation experiments using soft X-rays. We started to make a Test Element Group of SOI chip, which is called CPIXPTEG1 and evaluated its performance. We succeeded in readout of output signals for 16 keV X-rays from the SOI chips. We also found that the middle-SOI structure was effective against a signal distortion caused by hole traps in the buried oxide layer.

• OSTI ID: 22608414
• Journal Information: AIP Conference Proceedings, Vol. 1741, Issue 1; Conference: SRI2015: 12. international conference on synchrotron radiation instrumentation, New York, NY (United States), 6-10 Jul 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
KEK
KEV RANGE
LAYERS
OXIDES
PHOTONS
READOUT SYSTEMS
SI SEMICONDUCTOR DETECTORS
SIGNAL DISTORTION
SILICON
SOFT X RADIATION
SYNCHROTRON RADIATION
SYNCHROTRONS
TRAPS