Compositional analysis of dilute nitride doped indium antimonide bulk crystal by VDS technique
- Department of Physics, Jai Hind College, Churchgate, Mumbai, 400020 (India)
- Department of Physics, Ruparel College, Mahim, Mumbai, 400016 (India)
- Department of Physics, Mithibai College, Vile Parle (W), 400056, Mumbai (India)
- Electrical Engineering Department, I. I. T. B., 400076, Mumbai (India)
Dilute nitrides are suitable materials for fabrication of devices in detection of long wavelength infrared region. Dilute nitride doped Indium antimonide bulk crystals were grown using vertical directional solidification technique. The compositional characteristics of the crystals were carried out using EDS. The analysis was simulated and compared with observations using DTSA II software for accuracy. The ingots have uniform composition of Indium and Antimony. The actual nitrogen composition measured using EDS was 0.136% for doped nitrogen composition 0.1% except near conical end where it was 0.1%. The study of bonding between nitrogen, Indium and antimony was carried out using SIMS. The analysis shows strong presence of In-N bonding along with In-Sb bonds which indicates nitrogen has replaced antimony atoms in crystal lattice.
- OSTI ID:
- 22606620
- Journal Information:
- AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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