Study of defect formation from process step anomalies in limited boron source diffusion in crystalline silicon
In limited dopant source diffusion process, the deposition and the drive in conditions of the source play an important role in pn- junction formation. The pre diffusion anomalies can introduce defects in the emitter region during the process of diffusion which can glide into the bulk region. So, the defects formed in the emitter region due to different pre diffusion issues are studied in this work with boron spin on dopant source diffused in n-type crystalline Si. The samples are prepared for different diffusion conditions of times carried out at diffusion temperature of 900°C. Different characterization techniques used in this work confirms the presence of these defects in the emitter region. The dopant distribution under the same diffusion condition result in non- uniformity, varying the junction depth of the emitter. A single process step anomaly is sufficient enough to degrade the emitter performance and should be avoided.
- OSTI ID:
- 22606613
- Journal Information:
- AIP Conference Proceedings, Vol. 1728, Issue 1; Conference: ICC 2015: International conference on condensed matter and applied physics, Bikaner (India), 30-31 Oct 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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