Electron-beam pulse annealed Ti-implanted GaP
- National Centre for Nuclear Research, 7 Andrzeja Soltana Str., 05-400 Otwock (Poland)
- Institute of Tele and Radio Technology, 11 Ratuszowa Str., 03-450 Warsaw (Poland)
- Institute of High Current Electronics, 2/3 Akademichesky Ave., 634055 Tomsk (Russian Federation)
- Helmholtz-Zentrum Dresden-Rossendorf, 400 Bautzner Landstr., 01328 Dresden (Germany)
Gallium phosphide heavily doped with substitutional titanium is a prospective material for intermediate band solar cells. To manufacture such a material, single crystals of GaP were implanted with 120 keV Ti ions to doses between 5 × 10{sup 14} cm{sup −2} and 5 × 10{sup 15} cm{sup −2}. They were next pulse annealed with 2 μs electron-beam pulses of electron energy of about 13 keV and pulse energy density between 1 and 2 Jcm{sup −2}. The samples were studied by channeled Rutherford Backscattering, particle induced X-ray emission, and SIMS. The results show full recovery of crystal structure damaged by implantation and good retention of the implanted titanium without, however, its significant substitution at crystal sites.
- OSTI ID:
- 22598840
- Journal Information:
- Journal of Applied Physics, Vol. 120, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
BEAM PULSERS
CRYSTAL STRUCTURE
DAMAGE
DOPED MATERIALS
ELECTRON BEAMS
ELECTRONS
ENERGY DENSITY
GALLIUM PHOSPHIDES
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE 10-100
MASS SPECTROSCOPY
MONOCRYSTALS
PULSES
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SOLAR CELLS
TITANIUM
TITANIUM IONS
X RADIATION