Optical properties of type-II AlInAs/AlGaAs quantum dots by photoluminescence studies

Journal Article · Thu Jul 21 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4958867· OSTI ID:22597829

Saïdi, I.; Neffati, R.; Ben Radhia, S.; Lemaître, A. ^[1]; Bernardot, F.; Testelin, C. ^[2]

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1. Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, Route de Nozay, F-91460 Marcoussis (France)
2. Sorbonne Universités, UPMC Univ Paris 06, CNRS-UMR 7588, Institut des NanoSciences de Paris, F-75005 Paris (France)

We report photoluminescence (PL) characterization and model simulation of AlInAs/AlGaAs type-II quantum dots (QDs). A thorough and precise determination of the band parameters for QD and matrix materials is given, focusing on the effects of alloy composition and strain state on the electronic properties. Origins of experimentally observed PL emission peaks are identified through a comparison with the band lineup theoretically determined in this work. We interpret the QD emission as originating from indirect type-II transitions involving electrons in the barrier X valley and heavy holes with S and P symmetry.

• OSTI ID: 22597829
• Journal Information: Journal of Applied Physics, Vol. 120, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ALUMINIUM ARSENIDES
COMPARATIVE EVALUATIONS
ELECTRONS
FOCUSING
GALLIUM ARSENIDES
HOLES
INDIUM ARSENIDES
MATRICES
MATRIX MATERIALS
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
STRAINS
SYMMETRY