Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

Journal Article · Sat May 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4949514· OSTI ID:22596979

Dąbrowska-Szata, M. ^[1]; Stokowski, H.

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1. Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław (Poland)

Deep-level defects were investigated by deep level transient spectroscopy on the as-grown and annealed GaNAs layers of various nitrogen (N) contents. The unintentionally doped (uid) GaNAs layers were grown by metalorganic vapor phase epitaxy with N = 1.4%, 2.0%, 2.2%, and 2.4% on GaAs substrate. The possible origin and evolution of the deep-level defects upon annealing were analyzed with the use of the GaNAs band gap diagram concept [Kudrawiec et al., Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of donor traps decreases with N-related downward shift of the conduction band. On the basis of this diagram and in comparison with previous results, the N-related traps were associated with (N−As){sub As} or (N−N){sub As} split interstitials. It was also proposed that one of the electron traps and the hole trap, lying at the same level position in the bandgap of the annealed uid-GaNAs layers, can both act as one generation-recombination center partially responsible for poor optical properties of this alloy.

• OSTI ID: 22596979
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 18; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
COMPARATIVE EVALUATIONS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DIAGRAMS
DOPED MATERIALS
ELECTRONS
GALLIUM ARSENIDES
HOLES
INTERSTITIALS
LAYERS
NITROGEN
NITROGEN ADDITIONS
OPTICAL PROPERTIES
SUBSTRATES
TRAPS
VAPOR PHASE EPITAXY
VAPORS