Phosphorus and carrier density of heavily n-type doped germanium
- Department of Materials Engineering, University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-8656 (Japan)
The threshold current density of n-type, tensile-strained Ge lasers strongly depends on the electron density. Although optical net gain analyses indicate that the optimum electron density should be on the order of 1 × 10{sup 20} cm{sup −3} to get the lowest threshold, it is not a simple task to increase the electron density beyond the mid range of 10{sup 19} cm{sup −3}. The present paper analyzes the phenomenon where electron density is not proportional to phosphorus donor density, i.e., “saturation” phenomenon, by applying the so-called amphoteric defect model. The analyses indicate that the saturation phenomenon can be well explained by the charge compensation between the phosphorus donors (P{sup +}) and doubly negative charged Ge vacancies (V{sup 2−}).
- OSTI ID:
- 22596953
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 18; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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