GaInSb/InAs/AlSb quantum wells with InSb- and GaAs-like interfaces investigated by temperature- and magnetic field-dependent photoluminescence

Journal Article · Sat May 07 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4948330· OSTI ID:22596946

Chen, Xiren; Guo, Shaoling; Shao, Jun ^[1]; Xing, Junliang; Niu, Zhichuan ^[2]; Zhu, Liangqing ^[1]; Zha, F. -X. ^[3]

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1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai (China)
2. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)
3. Physics Department, Shanghai University, 200444 Shanghai (China)

GaInSb/InAs/AlSb quantum wells (QWs) with typical InSb- and GaAs-like interfaces (IFs) are investigated by temperature- and magnetic field-dependent photoluminescence (PL), respectively. The results show that (i) as temperature rises the PL energy of the QWs with either InSb- or GaAs-like IFs blueshifts slightly below 50 K but redshifts above and broadens rapidly, and the mechanism behind this is correlated to the IF roughness-related layer thickness fluctuation equivalent to a localization energy of about 9.5 meV; (ii) the PL diminishes monotonously as magnetic field rises except for the delocalized PL process of the InSb-like IF QWs, and the magnetic field-induced PL quenching is attributed to the IF roughness-induced electron-hole separation in the type-II QWs; and (iii) the magnetic field-dependent PL energy follows a typical excitonic diamagnetic shift for both located and dislocated states, and the deduced exciton binding energy, reduced effective mass, and average wavefunction extent are insensitive to the IF type. Comparison of different IF-type GaInSb/InAs QWs indicates that while the PL of the InSb-like IF sample contains type-I component as the IF confines heavy holes and acts as pseudo-barrier for electrons, leading to the coexistence of electrons and holes at the IFs, the IF-type does not affect the carrier localization and the in-plane excitonic behavior obviously.

• OSTI ID: 22596946
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BINDING ENERGY
COMPARATIVE EVALUATIONS
EFFECTIVE MASS
ELECTRONS
FLUCTUATIONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
HOLES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INTERFACES
MAGNETIC FIELDS
MEV RANGE 01-10
PHOTOLUMINESCENCE
QUANTUM WELLS
QUENCHING
RED SHIFT
ROUGHNESS
THICKNESS
WAVE FUNCTIONS