Piezoelectric domains in the AlGaN hexagonal microrods: Effect of crystal orientations
- Nanomaterials and Sensor Section, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
- Nanomaterials Characterization Section, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)
- Water and Steam Chemistry Laboratory, BARC Facilities, Kalpakkam 603102 (India)
Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors, and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self-catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence studies reveal the formation of AlGaN microrods in the wurtzite phase and ensure the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.
- OSTI ID:
- 22596935
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTUATORS
ALUMINIUM NITRIDES
ATMOSPHERIC PRESSURE
CHEMICAL VAPOR DEPOSITION
ELECTRIC FIELDS
INCLINATION
LAYERS
MICROSCOPY
MONOCRYSTALS
ORIENTATION
PHOTOLUMINESCENCE
PIEZOELECTRICITY
POLARIZATION
SENSORS
SUBSTRATES
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY