Investigation of proton damage in III-V semiconductors by optical spectroscopy
- Departamento Energía Solar, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina)
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)
- Laboratorio de Colisiones Atómicas, Centro Atómico Bariloche, E. Bustillo 9500, 8400 Bariloche (Argentina)
- Departamento Física Experimental, Centro Atómico Constituyentes, Av. Gral. Paz 1499, 1650 San Martín (Argentina)
- ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain)
We studied the damage produced by 2 MeV proton radiation on epitaxially grown InGaP/GaAs structure by means of spatially resolved Raman and photoluminescence (PL) spectroscopy. The irradiation was performed parallel to the sample surface in order to determine the proton penetration range in both compounds. An increase in the intensity of longitudinal optical phonons and a decrease in the luminescence were observed. We associate these changes with the creation of defects in the damaged region, also responsible for the observed change of the carrier concentration in the GaAs layer, determined by the shift of the phonon-plasmon coupled mode frequency. From the spatially resolved profile of the PL and phonon intensities, we obtained the proton range in both materials and we compared them with stopping and range of ions in matter simulations. The comparison between the experimentally obtained proton range and simulations shows a very good agreement for GaAs but a discrepancy of 20% for InGaP. This discrepancy can be explained in terms of limitations of the model to simulate the electronic orbitals and bonding structure of the simulated compound. In order to overcome this limitation, we propose an increase in 40% in the electronic stopping power for InGaP.
- OSTI ID:
- 22596822
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 23; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BONDING
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DAMAGE
DEFECTS
EPITAXY
GALLIUM ARSENIDES
IONS
IRRADIATION
MEV RANGE 01-10
PHONONS
PHOTOLUMINESCENCE
PLASMONS
PROTONS
SEMICONDUCTOR MATERIALS
SIMULATION
SPECTROSCOPY