Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells
- Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin (Germany)
- OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg (Germany)
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin (Germany)
We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage.
- OSTI ID:
- 22596774
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CONFINEMENT
ELECTROLUMINESCENCE
EXCITATION
GALLIUM NITRIDES
INTERFACES
OPTICAL PUMPING
PHOTOLUMINESCENCE
POINT DEFECTS
QUANTUM WELLS
THICKNESS
TIME RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY
VALENCE
WIDTH