AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

Journal Article · Sat May 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4951004· OSTI ID:22596713

Guo, Y.; Li, H.; Robertson, J. ^[1]

---

1. Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

• OSTI ID: 22596713
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
COMPARATIVE EVALUATIONS
DEFECTS
DIELECTRIC MATERIALS
DISTRIBUTION
ENERGY LEVELS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GERMANIUM
INDIUM ARSENIDES
LAYERS
NITROGEN
OXYGEN
RELIABILITY
SEMICONDUCTOR MATERIALS
STACKS
STRESSES
TRAPPING
VACANCIES