Sensitizing properties of luminescence centers on the emission of Er{sup 3+} in Si-rich SiO{sub 2} film

Journal Article · Sat May 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4952751· OSTI ID:22596706

Fu, Qianyu; Gao, Yuhan; Li, Dongsheng; Yang, Deren ^[1]

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1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

In this paper, we report on the luminescence-center (LC)-mediated excitation of Er{sup 3+} as a function of annealing temperature in Er-doped Si-rich SiO{sub 2} (SRO) films fabricated by electron beam evaporation. It is found that the annealing temperature has significant effects on the emission of Er{sup 3+} and the specific optical-active point-defects called LCs within Er-doped SRO films. Different luminescence centers generated by the evolution of microstructures during annealing process act as efficient sensitizers for Er{sup 3+} in the films when the annealing temperature is below 1100 °C. Moreover, the temperature dependence of the energy coupling between LCs and Er{sup 3+} demonstrates the effective phonon-mediated energy transfer process. In addition, when the annealing temperature reaches 1100 °C, the decreased density of activable erbium ions induced by the aggregation of Er will bring detrimental effects on the emission of Er{sup 3+}. It is demonstrated that an appropriate annealing process can be designed to achieve efficiently enhanced emissions from Er{sup 3+} ions by optimizing the density of LCs and the coupling between Er{sup 3+} and LCs.

• OSTI ID: 22596706
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 20; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
COUPLING
DENSITY
DOPED MATERIALS
ELECTRON BEAMS
ELECTRONS
ENERGY TRANSFER
ERBIUM IONS
EXCITATION
FILMS
LUMINESCENCE
MICROSTRUCTURE
OPTIMIZATION
PHONONS
POINT DEFECTS
SENSITIZERS
SILICA
SILICON OXIDES
STRONTIUM OXIDES
TEMPERATURE DEPENDENCE