Shift of optical absorption edge in SnO{sub 2} films with high concentrations of nitrogen grown by chemical vapor deposition
- I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany)
The optical and electrical properties of n-type SnO{sub 2} films with high concentrations of nitrogen (SnO{sub 2}:N) grown by chemical vapor deposition are studied. The carrier concentration increases from 4.1 × 10{sup 18} to 3.9 × 10{sup 19 }cm{sup −3} and the absorption edge shifts from 4.26 to 4.08 eV with increasing NH{sub 3} flow rate. Typical Urbach tails were observed from the absorption spectra and the Urbach energy increases from 0.321 to 0.526 eV with increasing NH{sub 3} flow rate. An “effective” absorption edge of about 4.61 eV was obtained for all investigated samples from fitting the extrapolations of the Urbach tails. Burstein-Moss effect, electron-impurity, and electron-electron interactions are shown to play a minor role for the shift of the absorption edges in SnO{sub 2}:N thin films.
- OSTI ID:
- 22596681
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 24; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTRA
ABUNDANCE
AMMONIA
CHEMICAL VAPOR DEPOSITION
CONCENTRATION RATIO
ELECTRICAL PROPERTIES
ELECTRON-ELECTRON INTERACTIONS
ELECTRONS
EXTRAPOLATION
FLOW RATE
IMPURITIES
NITROGEN
THIN FILMS
TIN OXIDES