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Title: Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

Abstract

We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

Authors:
; ; ; ; ; ;  [1];  [1]; ; ;  [2]; ; ;  [3]
  1. School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)
  2. Department of Electronic and Electrical Engineering, University College London, London WC1E 6BT (United Kingdom)
  3. CIP Technologies, Adastral Park, Martlesham Heath, Ipswich, Suffolk IP5 3RE (United Kingdom)
Publication Date:
OSTI Identifier:
22594612
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 119; Journal Issue: 15; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION RATIO; DOPED MATERIALS; EMISSION; GALLIUM ARSENIDES; INDIUM ARSENIDES; IRON ADDITIONS; LASERS; METALS; ORGANOMETALLIC COMPOUNDS; VAPORS

Citation Formats

Mohandas, Reshma A., Freeman, Joshua R., E-mail: j.r.freeman@leeds.ac.uk, Rosamond, Mark C., Chowdhury, Siddhant, Cunningham, John E., Davies, A. Giles, Linfield, Edmund H., Dean, Paul, Hatem, Osama, Department of Engineering Physics, Faculty of Engineering, Tanta University, PO Box 31521, Tanta, Ponnampalam, Lalitha, Fice, Martyn, Seeds, Alwyn J., Cannard, Paul J., Robertson, Michael J., and Moodie, David G. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP. United States: N. p., 2016. Web. doi:10.1063/1.4946845.
Mohandas, Reshma A., Freeman, Joshua R., E-mail: j.r.freeman@leeds.ac.uk, Rosamond, Mark C., Chowdhury, Siddhant, Cunningham, John E., Davies, A. Giles, Linfield, Edmund H., Dean, Paul, Hatem, Osama, Department of Engineering Physics, Faculty of Engineering, Tanta University, PO Box 31521, Tanta, Ponnampalam, Lalitha, Fice, Martyn, Seeds, Alwyn J., Cannard, Paul J., Robertson, Michael J., & Moodie, David G. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP. United States. https://doi.org/10.1063/1.4946845
Mohandas, Reshma A., Freeman, Joshua R., E-mail: j.r.freeman@leeds.ac.uk, Rosamond, Mark C., Chowdhury, Siddhant, Cunningham, John E., Davies, A. Giles, Linfield, Edmund H., Dean, Paul, Hatem, Osama, Department of Engineering Physics, Faculty of Engineering, Tanta University, PO Box 31521, Tanta, Ponnampalam, Lalitha, Fice, Martyn, Seeds, Alwyn J., Cannard, Paul J., Robertson, Michael J., and Moodie, David G. 2016. "Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP". United States. https://doi.org/10.1063/1.4946845.
@article{osti_22594612,
title = {Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP},
author = {Mohandas, Reshma A. and Freeman, Joshua R., E-mail: j.r.freeman@leeds.ac.uk and Rosamond, Mark C. and Chowdhury, Siddhant and Cunningham, John E. and Davies, A. Giles and Linfield, Edmund H. and Dean, Paul and Hatem, Osama and Department of Engineering Physics, Faculty of Engineering, Tanta University, PO Box 31521, Tanta and Ponnampalam, Lalitha and Fice, Martyn and Seeds, Alwyn J. and Cannard, Paul J. and Robertson, Michael J. and Moodie, David G.},
abstractNote = {We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.},
doi = {10.1063/1.4946845},
url = {https://www.osti.gov/biblio/22594612}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 15,
volume = 119,
place = {United States},
year = {Thu Apr 21 00:00:00 EDT 2016},
month = {Thu Apr 21 00:00:00 EDT 2016}
}