Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

Journal Article · Thu Apr 14 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4945675· OSTI ID:22594596

Wang, Liangxin; Zhao, Jiangtao; Hong, Bin; Hu, Kai; Luo, Zhenlin ^[1]; Yang, Yuanjun; Gao, Chen ^[1]; Peng, Jinlan; Zhang, Haibin; Wen, Xiaolei; Li, Xiaoguang ^[2]

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1. National Synchrotron Radiation Laboratory and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230029 (China)
2. Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230027 (China)

Vanadium dioxide (VO{sub 2}) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO{sub 3}) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal–insulator transition (MIT) behavior of the VO{sub 2} epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 10{sup 2} to 10{sup 4} with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thus larger grain size in the (010)-VO{sub 2}/(111)-SrTiO{sub 3} epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO{sub 2} films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO{sub 2} epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO{sub 2} films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO{sub 2} can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.

• OSTI ID: 22594596
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DEPOSITS
EPITAXY
FERMI LEVEL
FILMS
GRAIN SIZE
MAGNETRONS
MONOCRYSTALS
PEROVSKITE
PHASE TRANSFORMATIONS
RADIOWAVE RADIATION
SPUTTERING
STRAINS
STRONTIUM TITANATES
SUBSTRATES
SUPERLATTICES
TEMPERATURE DEPENDENCE
VANADIUM OXIDES