Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study
Abstract
The interface between a carbon nanotube (CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors (FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it is of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover,more »
- Authors:
-
- Center for Microtechnologies (ZfM), Technische Universität Chemnitz, Chemnitz D-09107 (Germany)
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Chemnitz, Chemnitz D-09107 (Germany)
- Publication Date:
- OSTI Identifier:
- 22594518
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON NANOTUBES; CLEANING; ELECTRICAL PROPERTIES; ETHANOL; FABRICATION; FIELD EFFECT TRANSISTORS; HYSTERESIS; IMPURITIES; METALS; MOLECULES; NITRIC ACID; PERFORMANCE; RAMAN SPECTROSCOPY; SURFACTANTS; WATER TREATMENT; X RADIATION
Citation Formats
Tittmann-Otto, J., E-mail: jana.tittmann-otto@zfm.tu-chemnitz.de, Hermann, S., Hartmann, M., Toader, M., Center for Advancing Electronics Dresden, Kalbacova, J., Rodriguez, R. D., Zahn, D. R. T., Semiconductor Physics, Technische Universität Chemnitz, Chemnitz D-09107, Schulz, S. E., Gessner, T., Center for Advancing Electronics Dresden, and Fraunhofer Institute for Electronic Nano Systems. Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study. United States: N. p., 2016.
Web. doi:10.1063/1.4944835.
Tittmann-Otto, J., E-mail: jana.tittmann-otto@zfm.tu-chemnitz.de, Hermann, S., Hartmann, M., Toader, M., Center for Advancing Electronics Dresden, Kalbacova, J., Rodriguez, R. D., Zahn, D. R. T., Semiconductor Physics, Technische Universität Chemnitz, Chemnitz D-09107, Schulz, S. E., Gessner, T., Center for Advancing Electronics Dresden, & Fraunhofer Institute for Electronic Nano Systems. Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study. United States. https://doi.org/10.1063/1.4944835
Tittmann-Otto, J., E-mail: jana.tittmann-otto@zfm.tu-chemnitz.de, Hermann, S., Hartmann, M., Toader, M., Center for Advancing Electronics Dresden, Kalbacova, J., Rodriguez, R. D., Zahn, D. R. T., Semiconductor Physics, Technische Universität Chemnitz, Chemnitz D-09107, Schulz, S. E., Gessner, T., Center for Advancing Electronics Dresden, and Fraunhofer Institute for Electronic Nano Systems. 2016.
"Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study". United States. https://doi.org/10.1063/1.4944835.
@article{osti_22594518,
title = {Effect of cleaning procedures on the electrical properties of carbon nanotube transistors—A statistical study},
author = {Tittmann-Otto, J., E-mail: jana.tittmann-otto@zfm.tu-chemnitz.de and Hermann, S. and Hartmann, M. and Toader, M. and Center for Advancing Electronics Dresden and Kalbacova, J. and Rodriguez, R. D. and Zahn, D. R. T. and Semiconductor Physics, Technische Universität Chemnitz, Chemnitz D-09107 and Schulz, S. E. and Gessner, T. and Center for Advancing Electronics Dresden and Fraunhofer Institute for Electronic Nano Systems},
abstractNote = {The interface between a carbon nanotube (CNT) and its environment can dramatically affect the electrical properties of CNT-based field-effect transistors (FETs). For such devices, the channel environment plays a significant role inducing doping or charge traps giving rise to hysteresis in the transistor characteristics. Thereby the fabrication process strongly determines the extent of those effects and the final device performance. In CNT-based devices obtained from dispersions, a proper individualization of the nanotubes is mandatory. This is generally realized by an ultrasonic treatment combined with surfactant molecules, which enwrap nanotubes forming micelle aggregates. To minimize impact on device performance, it is of vital importance to consider post-deposition treatments for removal of surfactant molecules and other impurities. In this context, we investigated the effect of several wet chemical cleaning and thermal post treatments on the electrical characteristics as well as physical properties of more than 600 devices fabricated only by wafer-level compatible technologies. We observed that nitric acid and water treatments improved the maximum-current of devices. Additionally, we found that the ethanol treatment successfully lowered hysteresis in the transfer characteristics. The effect of the chemical cleaning procedures was found to be more significant on CNT-metal contacts than for the FET channels. Moreover, we investigated the effect of an additional thermal cleaning step under vacuum after the chemical cleaning, which had an exceptional impact on the hysteresis behavior including hysteresis reversal. The presence of surfactant molecules on CNT was evidenced by X-ray photoelectron and Raman spectroscopies. By identifying the role of surfactant molecules and assessing the enhancement of device performance as a direct consequence of several cleaning procedures, these results are important for the development of CNT-based electronics at the wafer-level.},
doi = {10.1063/1.4944835},
url = {https://www.osti.gov/biblio/22594518},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 12,
volume = 119,
place = {United States},
year = {Mon Mar 28 00:00:00 EDT 2016},
month = {Mon Mar 28 00:00:00 EDT 2016}
}