Polar semiconductor heterojunction structure energy band diagram considerations

Journal Article · Mon Mar 28 00:00:00 EDT 2016 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4944598· OSTI ID:22594514

Lin, Shuxun; Wang, Maojun; Hao, Yilong ^[1]

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1. Institute of Microelectronics, Peking University, Beijing (China)

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

• OSTI ID: 22594514
• Journal Information: Journal of Applied Physics, Vol. 119, Issue 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CHARGE DENSITY
COMPUTERIZED SIMULATION
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
HETEROJUNCTIONS
NICKEL
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
STATISTICS