An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Sanchez, Carlos A.; King, Michael P.; Coltrin, Michael E.; Fortune, Torben R.; Kaplar, Robert J.

doi:10.1063/1.4959179

Title: An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

Journal Article · Mon Jul 18 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4959179· OSTI ID:22594428

Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.; Douglas, Erica A.; Sanchez, Carlos A.; King, Michael P.; Coltrin, Michael E.; Fortune, Torben R.; Kaplar, Robert J. ^[1]

Sandia National Laboratories, PO Box 5800, Albuquerque, New Mexico 87185-1085 (United States)

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al{sub 0.85}Ga{sub 0.15}N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I{sub on}/I{sub off} current ratio greater than 10{sup 7} and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. The room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

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OSTI ID:: 22594428

Journal Information:: Applied Physics Letters, Vol. 109, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951

Country of Publication:: United States

Language:: English

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71 CLASSICAL AND QUANTUM MECHANICS
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SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
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ELECTRIC POTENTIAL
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Title: An AlN/Al{sub 0.85}Ga{sub 0.15}N high electron mobility transistor

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