Reduction of thermal conductivity in MnSi{sub 1.7} multi-layered thin films with artificially inserted Si interfaces

Journal Article · Mon Aug 08 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4960634· OSTI ID:22594358

Yabuuchi, S.; Nishide, A.; Fukatani, N.; Hayakawa, J. ^[1]

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1. Center for Exploratory Research, Research & Development Group, Hitachi Ltd., 1-280, Higashi-koigakubo, Kokubunji, Tokyo 185-8601 (Japan)

We report a lowered lattice thermal conductivity in nm-scale MnSi{sub 1.7}/Si multilayers which were fabricated by controlling thermal diffusions of Mn and Si atoms. The thickness of the constituent layers is 1.5–5.0 nm, which is comparable to the phonon mean free path of both MnSi{sub 1.7} and Si. By applying the above nanostructures, we reduced the lattice thermal conductivity down to half that of bulk MnSi{sub 1.7}/Si composite materials. The obtained value of 1.0 W/K m is the experimentally observed minimum in MnSi{sub 1.7}-based materials without any heavy element doping and close to the minimum thermal conductivity. We attribute the reduced lattice thermal conductivity to phonon scattering at the MnSi{sub 1.7}/Si interfaces in the multilayers.

• OSTI ID: 22594358
• Journal Information: Applied Physics Letters, Vol. 109, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COMPARATIVE EVALUATIONS
COMPOSITE MATERIALS
INTERFACES
LAYERS
MANGANESE SILICIDES
MEAN FREE PATH
NANOSTRUCTURES
PHONONS
REDUCTION
SCATTERING
SILICON
THERMAL CONDUCTIVITY
THERMAL DIFFUSION
THICKNESS
THIN FILMS