Analysis of compositional uniformity in Al{sub x}Ga{sub 1−x}N thin films using atom probe tomography and electron microscopy

Journal Article · Fri Jul 15 00:00:00 EDT 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4953410· OSTI ID:22592877

Liu, Fang; Huang, Li; Porter, Lisa M.; Schreiber, Daniel K. ^[1]

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1. Energy and Environment Directorate, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352 (United States)

Calculated frequency distributions of atom probe tomography reconstructions (∼80 nm field of view) of very thin Al{sub x}Ga{sub 1−x}N (0.18 ≤ x ≤ 0.51) films grown via metalorganic vapor phase epitaxy on both (0001) GaN/AlN/SiC and (0001) GaN/sapphire heterostructures revealed homogeneous concentrations of Al and chemically abrupt Al{sub x}Ga{sub 1−x}N/GaN interfaces. The results of scanning transmission electron microscopy and selected area diffraction corroborated these results and revealed that neither superlattice ordering nor phase separation was present at nanometer length scales.

• OSTI ID: 22592877
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 4; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
ATOMS
CONCENTRATION RATIO
DIFFRACTION
GALLIUM NITRIDES
PROBES
SAPPHIRE
SILICON
SILICON CARBIDES
SUPERLATTICES
THIN FILMS
TOMOGRAPHY
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
VAPORS