Structure and optical band gaps of (Ba,Sr)SnO{sub 3} films grown by molecular beam epitaxy

Journal Article · Thu Sep 15 00:00:00 EDT 2016 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4959004· OSTI ID:22592855

Schumann, Timo; Raghavan, Santosh; Ahadi, Kaveh; Kim, Honggyu; Stemmer, Susanne ^[1]

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1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

Epitaxial growth of (Ba{sub x}Sr{sub 1−x})SnO{sub 3} films with 0 ≤ x ≤ 1 using molecular beam epitaxy is reported. It is shown that SrSnO{sub 3} films can be grown coherently strained on closely lattice and symmetry matched PrScO{sub 3} substrates. The evolution of the optical band gap as a function of composition is determined by spectroscopic ellipsometry. The direct band gap monotonously decreases with x from to 4.46 eV (x = 0) to 3.36 eV (x = 1). A large Burnstein-Moss shift is observed with La-doping of BaSnO{sub 3} films. The shift corresponds approximately to the increase in Fermi level and is consistent with the low conduction band mass.

• OSTI ID: 22592855
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 5; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
APPROXIMATIONS
BARIUM COMPOUNDS
ELLIPSOMETRY
FERMI LEVEL
FILMS
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
MOSSES
STRAINS
STRONTIUM COMPOUNDS
SUBSTRATES
SYMMETRY
TIN OXIDES