Rashba splitting of 100 meV in Au-intercalated graphene on SiC

Journal Article · Mon Apr 25 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4947286· OSTI ID:22591641

Marchenko, D.; Varykhalov, A.; Sánchez-Barriga, J.; Rader, O. ^[1]; Seyller, Th. ^[2]

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1. Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin (Germany)
2. Institut für Physik, Technische Universität Chemnitz, Reichenhainer Strasse 70, 09126 Chemnitz (Germany)

Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene, but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au intercalation yields two phases with different doping. We observe a 100 meV Rashba-type spin-orbit splitting at 0.9 eV binding energy in the case of p-type graphene after Au intercalation. We show that this giant splitting is due to hybridization and much more limited in energy and momentum space than for Au-intercalated graphene on Ni.

• OSTI ID: 22591641
• Journal Information: Applied Physics Letters, Vol. 108, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BINDING ENERGY
CLATHRATES
GRAPHENE
MEV RANGE
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SPIN
SUBSTRATES