High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

Journal Article · Mon Apr 25 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4948251· OSTI ID:22591639

Wu, Di-Cheng; Pan, You-Wei; Lin, Shih-Wei; Lin, Sheng-Di ^[1]; Wu, Jenq-Shinn ^[2]

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1. Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan (China)
2. Department of Electronic Engineering, National Changhwa University of Education, Changhwa 500, Taiwan (China)

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

• OSTI ID: 22591639
• Journal Information: Applied Physics Letters, Vol. 108, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
BYPASSES
ELECTRON MOBILITY
EPITAXY
GALLIUM ARSENIDES
INDIUM ARSENIDES
MAGNETORESISTANCE
METALS
QUANTUM WELLS
SUBSTRATES
TRANSISTORS
TWO-DIMENSIONAL SYSTEMS