Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

Journal Article · Mon Apr 04 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945598· OSTI ID:22591538

Schulze, C. S.; Prohl, C.; Füllert, V.; Rybank, S. ^[1]; Huang, X.; Lee, M. L. ^[2]; Maddox, S. J.; March, S. D.; Bank, S. R. ^[3]

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1. Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin (Germany)
2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States)
3. Microelectronics Research Center and ECE Department, The University of Texas at Austin, Austin, Texas 78758 (United States)

The atomic structure and stoichiometry of InAs/InGaAs quantum-dot-in-a-well structures grown on exactly oriented GaP/Si(001) are revealed by cross-sectional scanning tunneling microscopy. An averaged lateral size of 20 nm, heights up to 8 nm, and an In concentration of up to 100% are determined, being quite similar compared with the well-known quantum dots grown on GaAs substrates. Photoluminescence spectra taken from nanostructures of side-by-side grown samples on GaP/Si(001) and GaAs(001) show slightly blue shifted ground-state emission wavelength for growth on GaP/Si(001) with an even higher peak intensity compared with those on GaAs(001). This demonstrates the high potential of GaP/Si(001) templates for integration of III-V optoelectronic components into silicon-based technology.

• OSTI ID: 22591538
• Journal Information: Applied Physics Letters, Vol. 108, Issue 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
GROUND STATES
INDIUM ARSENIDES
PHOTOLUMINESCENCE
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
STOICHIOMETRY
SUBSTRATES
TUNNEL EFFECT
WAVELENGTHS