Discrete quantum dot like emitters in monolayer MoSe{sub 2}: Spatial mapping, magneto-optics, and charge tuning

Journal Article · Mon Apr 04 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945268· OSTI ID:22591528

Branny, Artur; Kumar, Santosh; Wang, Gang; Robert, Cedric; Lassagne, Benjamin; Marie, Xavier; Urbaszek, Bernhard ^[1]

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1. Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse (France)

Transition metal dichalcogenide monolayers such as MoSe{sub 2}, MoS{sub 2}, and WSe{sub 2} are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report on spectrally sharp, spatially localized emission in monolayer MoSe{sub 2}. We find this quantum dot-like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to −4, as for 2D excitons in this material. In a charge tunable sample, we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage.

• OSTI ID: 22591528
• Journal Information: Applied Physics Letters, Vol. 108, Issue 14; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EMISSION
EXCITONS
GOLD
LANDE FACTOR
MAPPING
MEV RANGE
MOLYBDENUM SELENIDES
MOLYBDENUM SULFIDES
OPTICS
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
SPIN
TUNING