Investigation of spin-gapless semiconductivity and half-metallicity in Ti{sub 2}MnAl-based compounds
- Department of Physics, University of Northern Iowa, Cedar Falls, Iowa 50614 (United States)
- Department of Physics, South Dakota State University, Brookings, South Dakota 57007 (United States)
- Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588 (United States)
The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti{sub 2}MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.
- OSTI ID:
- 22591526
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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