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Title: Nanowire LEDs grown directly on flexible metal foil

Abstract

Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured with the underlying metallic grains. Photoluminescence spectra of GaN nanowires grown on metal foils are comparable to GaN nanowires grown on single crystal Si wafers. Similarly, photoluminescence lifetimes do not vary significantly between these samples. Operational AlGaN light emitting diodes are grown directly on flexible Ta foil with an electroluminescence peak emission of ∼350 nm and a turn-on voltage of ∼5 V. These results pave the way for roll-to-roll manufacturing of solid state optoelectronics.

Authors:
 [1]
  1. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
Publication Date:
OSTI Identifier:
22591520
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 14; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON SCANNING; FOILS; GALLIUM NITRIDES; LIFETIME; LIGHT EMITTING DIODES; MANUFACTURING; METALS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOCRYSTALS; NANOWIRES; PEAKS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SOLIDS; SPECTRA; TEXTURE

Citation Formats

May, Brelon J., Sarwar, A. T. M. Golam, Myers, Roberto C., E-mail: myers.1079@osu.edu, and Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210. Nanowire LEDs grown directly on flexible metal foil. United States: N. p., 2016. Web. doi:10.1063/1.4945419.
May, Brelon J., Sarwar, A. T. M. Golam, Myers, Roberto C., E-mail: myers.1079@osu.edu, & Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210. Nanowire LEDs grown directly on flexible metal foil. United States. https://doi.org/10.1063/1.4945419
May, Brelon J., Sarwar, A. T. M. Golam, Myers, Roberto C., E-mail: myers.1079@osu.edu, and Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210. 2016. "Nanowire LEDs grown directly on flexible metal foil". United States. https://doi.org/10.1063/1.4945419.
@article{osti_22591520,
title = {Nanowire LEDs grown directly on flexible metal foil},
author = {May, Brelon J. and Sarwar, A. T. M. Golam and Myers, Roberto C., E-mail: myers.1079@osu.edu and Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210},
abstractNote = {Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured with the underlying metallic grains. Photoluminescence spectra of GaN nanowires grown on metal foils are comparable to GaN nanowires grown on single crystal Si wafers. Similarly, photoluminescence lifetimes do not vary significantly between these samples. Operational AlGaN light emitting diodes are grown directly on flexible Ta foil with an electroluminescence peak emission of ∼350 nm and a turn-on voltage of ∼5 V. These results pave the way for roll-to-roll manufacturing of solid state optoelectronics.},
doi = {10.1063/1.4945419},
url = {https://www.osti.gov/biblio/22591520}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 108,
place = {United States},
year = {Mon Apr 04 00:00:00 EDT 2016},
month = {Mon Apr 04 00:00:00 EDT 2016}
}