Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

Journal Article · Mon Mar 28 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4945100· OSTI ID:22591504

Brémond, G. ^[1]; Chauveau, J. M. ^[2]; Brenier, R. ^[3]; Sallet, V.; Jomard, F.; Sartel, C. ^[4]

---

1. Institut des Nanotechnologies de Lyon (INL), Université de Lyon, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne (France)
2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, rue Bernard Grégory 06560 Valbonne Sophia Antipolis (France)
3. Institut Lumière Matière (ILM), Université de Lyon, CNRS UMR 5306, Université Claude Bernard Lyon 1, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne (France)
4. Groupe d'Étude de la Matière Condensée (GEMaC), CNRS-Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles (France)

Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in order to measure their residual carrier concentration. For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO:Ga multilayer staircase structures grown by molecular beam epitaxy. The Ga density measured by SIMS varies in the 1.7 × 10{sup 17 }cm{sup −3} to 3 × 10{sup 20 }cm{sup −3} range. From measurements on such Ga doped multi-layers, a monotonic decrease in SSRM resistance with increasing Ga density was established, indicating SSRM being a well-adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally, relevant SSRM signal contrasts were detected on nid ZnO NWs, and the residual carrier concentration is estimated in the 1–3 × 10{sup 18 }cm{sup −3} range, in agreement with the result from four-probe measurements.

• OSTI ID: 22591504
• Journal Information: Applied Physics Letters, Vol. 108, Issue 13; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CALIBRATION
CARRIERS
CHEMICAL VAPOR DEPOSITION
DENSITY
DOPED MATERIALS
ION MICROPROBE ANALYSIS
LAYERS
MASS SPECTROSCOPY
MICROSCOPY
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
NANOWIRES
ORGANOMETALLIC COMPOUNDS
PROBES
ZINC OXIDES