Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}
Abstract
UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (In{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.
- Authors:
-
- Institut für Experimentelle Physik II, Fakultät für Physik und Geowissenschaften, Universität Leipzig, Linnéstraße 5, 04103 Leipzig (Germany)
- Publication Date:
- OSTI Identifier:
- 22591486
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 108; Journal Issue: 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABLATION; ABSORPTION; DEPOSITS; DOPED MATERIALS; ENERGY BEAM DEPOSITION; GAIN; ILLUMINANCE; INDIUM; LASER RADIATION; LASERS; PHOTODIODES; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; THIN FILMS; ULTRAVIOLET RADIATION
Citation Formats
Zhang, Zhipeng, Wenckstern, Holger von, Lenzner, Jörg, Lorenz, Michael, and Grundmann, Marius. Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}. United States: N. p., 2016.
Web. doi:10.1063/1.4944860.
Zhang, Zhipeng, Wenckstern, Holger von, Lenzner, Jörg, Lorenz, Michael, & Grundmann, Marius. Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}. United States. https://doi.org/10.1063/1.4944860
Zhang, Zhipeng, Wenckstern, Holger von, Lenzner, Jörg, Lorenz, Michael, and Grundmann, Marius. 2016.
"Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}". United States. https://doi.org/10.1063/1.4944860.
@article{osti_22591486,
title = {Visible-blind and solar-blind ultraviolet photodiodes based on (In{sub x}Ga{sub 1−x}){sub 2}O{sub 3}},
author = {Zhang, Zhipeng and Wenckstern, Holger von and Lenzner, Jörg and Lorenz, Michael and Grundmann, Marius},
abstractNote = {UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (In{sub x}Ga{sub 1–x}){sub 2}O{sub 3} thin film with a monotonic lateral variation of 0.0035 < x < 0.83. Such layer was deposited by employing a continuous composition spread approach relying on the ablation of a single segmented target in pulsed-laser deposition. The photo response signal is provided from a metal-semiconductor-metal structure upon backside illumination. The absorption onset was tuned from 4.83 to 3.22 eV for increasing x. Higher responsivities were observed for photodiodes fabricated from indium-rich part of the sample, for which an internal gain mechanism could be identified.},
doi = {10.1063/1.4944860},
url = {https://www.osti.gov/biblio/22591486},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 108,
place = {United States},
year = {Mon Mar 21 00:00:00 EDT 2016},
month = {Mon Mar 21 00:00:00 EDT 2016}
}
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