Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique
- Department of Physics, Chonnam National University, Gwangju 61186 (Korea, Republic of)
We report an experimental method to overcome the long processing time required for fabricating graphite films by a transfer process from a catalytic layer to a substrate, as well as our study of the growth process of graphite films using a pulsed laser deposition combined with in-situ monitoring based on reflection high-energy electron diffraction technique. We monitored the structural evolution of nano-crystalline graphite films directly grown on AlN-coated Si substrates without any catalytic layer. We found that the carbon films grown for less than 600 s cannot manifest the graphite structure due to a high defect density arising from grain boundaries; however, the carbon film can gradually become a nano-crystalline graphite film with a thickness of approximately up to 5 nm. The Raman spectra and electrical properties of carbon films indicate that the nano-crystalline graphite films can be fabricated, even at the growth temperature as low as 850 °C within 600 s.
- OSTI ID:
- 22591483
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 12; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
ALUMINIUM NITRIDES
APPROXIMATIONS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ENERGY BEAM DEPOSITION
FILMS
GRAIN BOUNDARIES
GRAPHITE
LASER RADIATION
LASERS
MONITORING
NANOSTRUCTURES
PULSED IRRADIATION
PULSES
RAMAN SPECTRA
REFLECTION
SUBSTRATES
THICKNESS