Tunnelling anisotropic magnetoresistance at La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-graphene interfaces

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4942778· OSTI ID:22591444

Yan, W.; Kar-Narayan, S.; Lombardo, A.; Barbone, M.; Milana, S.; Ferrari, A. C. ^[1]; Ghidini, M. ^[2]; Hämäläinen, S. J.; Dijken, S. van ^[3]

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1. Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA (United Kingdom)
2. Department of Materials Science, University of Cambridge, Cambridge CB3 0FS (United Kingdom)
3. NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box 15100, FI-00076 Aalto (Finland)

Using ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} electrodes bridged by single-layer graphene, we observe magnetoresistive changes of ∼32–35 MΩ at 5 K. Magneto-optical Kerr effect microscopy at the same temperature reveals that the magnetoresistance arises from in-plane reorientations of electrode magnetization, evidencing tunnelling anisotropic magnetoresistance at the La{sub 0.67}Sr{sub 0.33}MnO{sub 3}-graphene interfaces. Large resistance switching without spin transport through the non-magnetic channel could be attractive for graphene-based magnetic-sensing applications.

• OSTI ID: 22591444
• Journal Information: Applied Physics Letters, Vol. 108, Issue 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANISOTROPY
ELECTRODES
GRAPHENE
INTERFACES
KERR EFFECT
LAYERS
MAGNETIZATION
MAGNETORESISTANCE
MICROSCOPY
SPIN
TUNNEL EFFECT