Effects of rapid thermal annealing on two-dimensional delocalized electronic states of the epitaxial N δ-doped layer in GaAs

Journal Article · Mon Mar 14 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4944055· OSTI ID:22591438

Ogawa, Yasuhiro; Harada, Yukihiro; Baba, Takeshi; Kaizu, Toshiyuki; Kita, Takashi ^[1]

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1. Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)

We have conducted rapid thermal annealing (RTA) for improving the two-dimensional (2D) arrangement of electronic states in the epitaxial nitrogen (N) δ-doped layer in GaAs. RTA rearranged the N-pair configurations in the GaAs (001) plane and reduced the number of non-radiative recombination centers. Furthermore, a Landau shift, representing the 2D delocalized electronic states in the (001) plane, was observed at around zero magnetic field intensity in the Faraday configuration.

• OSTI ID: 22591438
• Journal Information: Applied Physics Letters, Vol. 108, Issue 11; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
CONFIGURATION
DOPED MATERIALS
EPITAXY
GALLIUM ARSENIDES
LAYERS
MAGNETIC FIELDS
NITROGEN
RECOMBINATION