Control of excitons in multi-layer van der Waals heterostructures

Dorow, C. J.; Fogler, M. M.; Butov, L. V.; Hu, S.; Mishchenko, A.; Geim, A. K.

doi:10.1063/1.4943204

Title: Control of excitons in multi-layer van der Waals heterostructures

Journal Article · Mon Mar 07 00:00:00 EST 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4943204· OSTI ID:22591405

Dorow, C. J.; Fogler, M. M.; Butov, L. V. ^[1]; Hu, S.; Mishchenko, A.; Geim, A. K. ^[2]

Department of Physics, University of California at San Diego, La Jolla, California 92093-0319 (United States)
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL (United Kingdom)

We report an experimental study of excitons in a double quantum well van der Waals heterostructure made of atomically thin layers of MoS{sub 2} and hexagonal boron nitride. The emission of neutral and charged excitons is controlled by gate voltage, temperature, and both the helicity and the power of optical excitation.

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OSTI ID:: 22591405

Journal Information:: Applied Physics Letters, Vol. 108, Issue 10; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951

Country of Publication:: United States

Language:: English

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