Two-level quenching of photoluminescence in hexagonal boron nitride micropowder

Journal Article · Tue Mar 29 00:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4943473· OSTI ID:22590851

Henaish, A. M. A. ^[1]; Vokhmintsev, A. S.

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1. Ural Federal University, NANOTECH Center, Mira Street, 19, Yekaterinburg, Russia, 620002 (Russian Federation)

The processes of photoluminescence thermal quenching in the range RT – 800 K of h-BN micropowder in the 3.56 eV band were studied. It was found that two non-radiative channels of excitations relaxation with activation energies of 0.27 and 0.81 eV control the quenching for emission observed. It was assumed that emptying the shallow traps based on O{sub N}-centers characterized external quenching in RT – 530 K range and non-radiative mechanism of donor-acceptor recombination began to dominate at T > 530 K.

• OSTI ID: 22590851
• Journal Information: AIP Conference Proceedings, Vol. 1717, Issue 1; Conference: ICE-SEAM 2015: 4. international conference and exhibition on sustainable energy and advanced materials 2015, Solo (Indonesia), 11-12 Nov 2015; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
36 MATERIALS SCIENCE
ACTIVATION ENERGY
BORON NITRIDES
CONTROL
EXCITATION
HEXAGONAL LATTICES
PHOTOLUMINESCENCE
QUENCHING
RECOMBINATION
RELAXATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TRAPS