A structure of CdS/Cu{sub x}S quantum dots sensitized solar cells
- Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)
- Department of Chemical Physics, Lund University, Box 124, 22100 Lund (Sweden)
This work introduces a type of CdS/Cu{sub x}S quantum dots (QDs) as sensitizers in quantum dot sensitized solar cells by in-situ cationic exchange reaction method where CdS photoanode is directly immersed in CuCl{sub 2} methanol solution to replace Cd{sup 2+} by Cu{sup 2+}. The p-type Cu{sub x}S layer on the surface of the CdS QDs can be considered as hole transport material, which not only enhances the light harvesting of photoanode but also boosts the charge separation after photo-excitation. Therefore, both the electron collection efficiency and power conversion efficiency of the solar cell are improved from 80% to 92% and from 1.21% to 2.78%, respectively.
- OSTI ID:
- 22590715
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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