Effective work function engineering for a TiN/XO(X = La, Zr, Al)/SiO{sub 2} stack structures
- DRAM Technology Development Team, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448 (Korea, Republic of)
- Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678 (Korea, Republic of)
In this study, we demonstrated that work function engineering is possible over a wide range (+200 mV to −430 mV) in a TiN/XO (X = La, Zr, or Al)/SiO{sub 2} stack structures. From ab initio simulations, we selected the optimal material for the work function engineering. The work function engineering mechanism was described by metal diffusion into the TiN film and silicate formation in the TiN/SiO{sub 2} interface. The metal doping and the silicate formation were confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling, respectively. In addition, the amount of doped metal in the TiN film depended on the thickness of the insertion layer XO. From the work function engineering technique, which can control a variety of threshold voltages (Vth), an improvement in transistors with different V{sub th} values in the TiN/XO/SiO{sub 2} stack structures is expected.
- OSTI ID:
- 22590697
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Systematic Study of the Effect of La2O3 Incorporation on the Flatband Voltage and Si Band Bending in the TiN/HfO2 /SiO2 /p-Si Stack
Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application