Terahertz imaging of Landau levels in HgTe-based topological insulators
- Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS–Université de Montpellier, Montpellier (France)
- Institut d'Electronique et des Systèmes (IES), UMR 5214 CNRS–Université de Montpellier, Montpellier (France)
- Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod (Russian Federation)
- Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent'eva 13, 630090 Novosibirsk (Russian Federation)
We report on sub-terahertz photoconductivity under the magnetic field of a two dimensional topological insulator based on HgTe quantum wells. We perform a detailed visualization of Landau levels by means of photoconductivity measured at different gate voltages. This technique allows one to determine a critical magnetic field, corresponding to topological phase transition from inverted to normal band structure, even in almost gapless samples. The comparison with realistic calculations of Landau levels reveals a smaller role of bulk inversion asymmetry in HgTe quantum wells than it was assumed previously.
- OSTI ID:
- 22590655
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 26; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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