Influence of proton radiation on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices

Journal Article · Mon Jun 27 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4954901· OSTI ID:22590625

Höglund, L.; Ting, D. Z.; Khoshakhlagh, A.; Soibel, A.; Fisher, A.; Hill, C. J.; Keo, S.; Rafol, S.; Gunapala, S. D. ^[1]

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1. Center for Infrared Photodetectors, California Institute of Technology, Jet Propulsion Laboratory, 4800 Oak Grove Drive, Pasadena, California 91109-8099 (United States)

Influence of proton radiation on the minority carrier lifetime and on carrier concentrations in InAs/InAsSb superlattices has been studied for radiation doses up to 300 krad. The lifetime decreased from 1.8 μs down to 430 ns as the dose was increased. A variation of the carrier concentration in the range 1–2 × 10{sup 15} with increasing radiation dose was observed. The lifetime drop was however mainly caused by added Shockley-Read-Hall defects in the material. The position of these Shockley-Read-Hall centers was estimated to ∼60 meV below the conduction band edge from comparison between calculated and measured temperature dependencies of the minority carrier lifetime.

• OSTI ID: 22590625
• Journal Information: Applied Physics Letters, Vol. 108, Issue 26; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARRIER LIFETIME
INDIUM ARSENIDES
MILLI EV RANGE
PROTONS
RADIATION DOSES
SUPERLATTICES