GaN Schottky diodes with single-crystal aluminum barriers grown by plasma-assisted molecular beam epitaxy
- Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)
GaN-based Schottky barrier diodes (SBDs) with single-crystal Al barriers grown by plasma-assisted molecular beam epitaxy are fabricated. Examined using in-situ reflection high-energy electron diffractions, ex-situ high-resolution x-ray diffractions, and high-resolution transmission electron microscopy, it is determined that epitaxial Al grows with its [111] axis coincident with the [0001] axis of the GaN substrate without rotation. In fabricated SBDs, a 0.2 V barrier height enhancement and 2 orders of magnitude reduction in leakage current are observed in single crystal Al/GaN SBDs compared to conventional thermal deposited Al/GaN SBDs. The strain induced piezoelectric field is determined to be the major source of the observed device performance enhancements.
- OSTI ID:
- 22590521
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM
ELECTRON DIFFRACTION
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
MONOCRYSTALS
PIEZOELECTRICITY
PLASMA
RESOLUTION
SCHOTTKY BARRIER DIODES
STRAINS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION