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Title: Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating

Abstract

We investigate the early stage of silicon nanowire growth by the vapor-liquid-solid mechanism using laser-localized heating combined with ex-situ chemical mapping analysis by energy-filtered transmission electron microscopy. By achieving fast heating and cooling times, we can precisely determine the nucleation times for nanowire growth. We find that the silicon nanowire nucleation process occurs on a time scale of ∼10 ms, i.e., orders of magnitude faster than the times reported in investigations using furnace processes. The rate-limiting step for silicon nanowire growth at temperatures in the vicinity of the eutectic temperature is found to be the gas reaction and/or the silicon crystal growth process, whereas at higher temperatures it is the rate of silicon diffusion through the molten catalyst that dictates the nucleation kinetics.

Authors:
; ; ;  [1];  [2]
  1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720-1740 (United States)
  2. Department of Mechanical Engineering, Stony Brook University, Stony Brook, New York 11794 (United States)
Publication Date:
OSTI Identifier:
22590514
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CATALYSTS; CRYSTAL GROWTH; EUTECTICS; FILTERS; HEATING; LASERS; NANOWIRES; NUCLEATION; SILICON; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Ryu, Sang-gil, Kim, Eunpa, Grigoropoulos, Costas P., E-mail: cgrigoro@berkeley.edu, Allen, Frances I., Minor, Andrew M., National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Hwang, David J. Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating. United States: N. p., 2016. Web. doi:10.1063/1.4961374.
Ryu, Sang-gil, Kim, Eunpa, Grigoropoulos, Costas P., E-mail: cgrigoro@berkeley.edu, Allen, Frances I., Minor, Andrew M., National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, & Hwang, David J. Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating. United States. https://doi.org/10.1063/1.4961374
Ryu, Sang-gil, Kim, Eunpa, Grigoropoulos, Costas P., E-mail: cgrigoro@berkeley.edu, Allen, Frances I., Minor, Andrew M., National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, and Hwang, David J. 2016. "Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating". United States. https://doi.org/10.1063/1.4961374.
@article{osti_22590514,
title = {Incubation behavior of silicon nanowire growth investigated by laser-assisted rapid heating},
author = {Ryu, Sang-gil and Kim, Eunpa and Grigoropoulos, Costas P., E-mail: cgrigoro@berkeley.edu and Allen, Frances I. and Minor, Andrew M. and National Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720 and Hwang, David J.},
abstractNote = {We investigate the early stage of silicon nanowire growth by the vapor-liquid-solid mechanism using laser-localized heating combined with ex-situ chemical mapping analysis by energy-filtered transmission electron microscopy. By achieving fast heating and cooling times, we can precisely determine the nucleation times for nanowire growth. We find that the silicon nanowire nucleation process occurs on a time scale of ∼10 ms, i.e., orders of magnitude faster than the times reported in investigations using furnace processes. The rate-limiting step for silicon nanowire growth at temperatures in the vicinity of the eutectic temperature is found to be the gas reaction and/or the silicon crystal growth process, whereas at higher temperatures it is the rate of silicon diffusion through the molten catalyst that dictates the nucleation kinetics.},
doi = {10.1063/1.4961374},
url = {https://www.osti.gov/biblio/22590514}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 109,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}