Sequential control of step-bunching during graphene growth on SiC (0001)

Journal Article · Mon Aug 22 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4961630· OSTI ID:22590477

Bao, Jianfeng; Kusunoki, Michiko ^[1]; Yasui, Osamu; Norimatsu, Wataru; Matsuda, Keita ^[2]

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1. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603 (Japan)
2. Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)

We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.

• OSTI ID: 22590477
• Journal Information: Applied Physics Letters, Vol. 109, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CONTROL
GRAPHENE
HEATING RATE
SILICON CARBIDES
SUBSTRATES