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Title: Crystal growth, electronic structure, and properties of Ni-substituted FeGa{sub 3}

Journal Article · · Journal of Solid State Chemistry
 [1];  [1];  [1];  [2];  [3]; ;  [4]
  1. Department of Chemistry, Lomonosov Moscow State University, Moscow 119991 (Russian Federation)
  2. National Institute of Chemical Physics and Biophysics, 12618 Tallinn (Estonia)
  3. Faculty of Physics, Lomonosov Moscow State University, Moscow 119991 (Russian Federation)
  4. Laboratoire CRISMAT, UMR 6508 CNRS/ENSICAEN, F-14050 CAEN Cedex 4 (France)

Crystals of the Fe{sub 1−x}Ni{sub x}Ga{sub 3} limited solid solution (x<0.045) have been grown from gallium flux. We have explored the electronic structure as well as magnetic and thermoelectric properties of Fe{sub 0.975}Ni{sub 0.025}Ga{sub 3} in comparison with Fe{sub 0.95}Co{sub 0.05}Ga{sub 3}, following the rigid band approach and assuming that one Ni atom donates twice the number of electrons as one Co atom. However, important differences between the Co- and Ni-doped compounds are found below 620 K, which is the temperature of the metal-to-insulator transition for both compounds. We have found that Fe{sub 0.975}Ni{sub 0.025}Ga{sub 3} displays lower degree of spatial inhomogeneity on the local level and exhibits diamagnetic behavior with a broad shallow minimum in the magnetic susceptibility near 35 K, in sharp contrast with the Curie–Weiss paramagnetism of Fe{sub 0.95}Co{sub 0.05}Ga{sub 3}. Transport measurements have shown the maximum of the thermoelectric figure-of-merit ZT of 0.09 and 0.14 at 620 K for Fe{sub 0.975}Ni{sub 0.025}Ga{sub 3} and Fe{sub 0.95}Co{sub 0.05}Ga{sub 3}, respectively. - Graphical abstract: Crystals of Ni-substituted FeGa{sub 3} up to 8 mm long were grown from gallium flux (see Figure for the temperature profile and crystal shape) that allowed studying magnetic and thermoelectric properties of the title solid solution.

OSTI ID:
22584038
Journal Information:
Journal of Solid State Chemistry, Vol. 236; Other Information: Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English