Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

Journal Article · Sat Oct 15 00:00:00 EDT 2016 · Materials Research Bulletin

DOI:https://doi.org/10.1016/J.MATERRESBULL.2016.02.004· OSTI ID:22581635

Son, Hyo-Soo; Choi, Nak-Jung ^[1]; Kim, Kyoung-Bo ^[2]; Kim, Moojin ^[3]; Lee, Sung-Nam ^[1]

---

1. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)
2. Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon 402-752 (Korea, Republic of)
3. Department of Renewable Energy, Jungwon University, Goesan-gun, Chungbuk 367-805 (Korea, Republic of)

Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

• OSTI ID: 22581635
• Journal Information: Materials Research Bulletin, Vol. 82; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ATOMIC FORCE MICROSCOPY
CONCENTRATION RATIO
CRYSTAL GROWTH
CRYSTALS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTROCHEMISTRY
ELECTRODEPOSITION
GRAIN SIZE
HYDROTHERMAL SYNTHESIS
LAYERS
NANOSTRUCTURES
SAPPHIRE
SEEDS
THIN FILMS
THREE-DIMENSIONAL LATTICES
X-RAY DIFFRACTION
ZINC OXIDES