Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO)
Abstract
Highlights: • We have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. • ZnO doping improved the electrical parameters of MoS{sub 2} transistor (I{sub on}↑, μ{sub FE}↑, n↑). • The reduction of ZnO doping effect (ΔV{sub TH}: ∼75% ↓) was observed in air. • The highest photoresponsivity of ZnO-doped MoS{sub 2} photodetector was 3.18 × 10{sup 3} A/W. • The highest detectivity of ZnO-doped MoS{sub 2} photodetector was 5.94 × 10{sup 12} Jones. - Abstract: In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (I{sub D}–V{sub G} with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS{sub 2}-based electronics (I{sub on}↑, μ{sub FE}↑, n↑) owing to reduction of the effective barrier height between the source and the MoS{sub 2} channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔV{sub TH} of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS{sub 2} photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused bymore »
- Authors:
-
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
- School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)
- Publication Date:
- OSTI Identifier:
- 22581632
- Resource Type:
- Journal Article
- Journal Name:
- Materials Research Bulletin
- Additional Journal Information:
- Journal Volume: 82; Other Information: Copyright (c) 2016 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; LASER RADIATION; MOLYBDENUM; MOLYBDENUM SULFIDES; PHOTODETECTORS; RAMAN SPECTROSCOPY; RECOMBINATION; REDUCTION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; ZINC OXIDES
Citation Formats
Kang, Dong-Ho, Hong, Seong-Taek, Oh, Aely, Kim, Seung-Hwan, Yu, Hyun-Yong, and Park, Jin-Hong. Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO). United States: N. p., 2016.
Web. doi:10.1016/J.MATERRESBULL.2016.02.029.
Kang, Dong-Ho, Hong, Seong-Taek, Oh, Aely, Kim, Seung-Hwan, Yu, Hyun-Yong, & Park, Jin-Hong. Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO). United States. https://doi.org/10.1016/J.MATERRESBULL.2016.02.029
Kang, Dong-Ho, Hong, Seong-Taek, Oh, Aely, Kim, Seung-Hwan, Yu, Hyun-Yong, and Park, Jin-Hong. 2016.
"Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO)". United States. https://doi.org/10.1016/J.MATERRESBULL.2016.02.029.
@article{osti_22581632,
title = {Nondegenerate n-type doping phenomenon on molybdenum disulfide (MoS{sub 2}) by zinc oxide (ZnO)},
author = {Kang, Dong-Ho and Hong, Seong-Taek and Oh, Aely and Kim, Seung-Hwan and Yu, Hyun-Yong and Park, Jin-Hong},
abstractNote = {Highlights: • We have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. • ZnO doping improved the electrical parameters of MoS{sub 2} transistor (I{sub on}↑, μ{sub FE}↑, n↑). • The reduction of ZnO doping effect (ΔV{sub TH}: ∼75% ↓) was observed in air. • The highest photoresponsivity of ZnO-doped MoS{sub 2} photodetector was 3.18 × 10{sup 3} A/W. • The highest detectivity of ZnO-doped MoS{sub 2} photodetector was 5.94 × 10{sup 12} Jones. - Abstract: In this paper, we have demonstrated nondegenerate n-type doping phenomenon of MoS{sub 2} by ZnO. The ZnO doping effects were systematically investigated by Raman spectroscopy and electrical/optical measurements (I{sub D}–V{sub G} with/without exposure to 520, 655, 785, and 850 nm laser sources). The ZnO doping improved the performance parameters of MoS{sub 2}-based electronics (I{sub on}↑, μ{sub FE}↑, n↑) owing to reduction of the effective barrier height between the source and the MoS{sub 2} channel. We also monitored the effects of ZnO doping during exposure to air; reduction in ΔV{sub TH} of about 75% was observed after 156 h. In addition, the optoelectronic performance of the MoS{sub 2} photodetector was enhanced due to the reduction of the recombination rate of photogenerated carriers caused by ZnO doping. In our results, the highest photoresponsivity (about 3.18 × 10{sup 3} A/W) and detectivity (5.94 × 10{sup 12} Jones) of the ZnO-doped photodetector were observed for 520 nm laser exposure.},
doi = {10.1016/J.MATERRESBULL.2016.02.029},
url = {https://www.osti.gov/biblio/22581632},
journal = {Materials Research Bulletin},
issn = {0025-5408},
number = ,
volume = 82,
place = {United States},
year = {Sat Oct 15 00:00:00 EDT 2016},
month = {Sat Oct 15 00:00:00 EDT 2016}
}