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Title: Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

Abstract

The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm{sup -2} at an electron energy of 18 keV. (lasers)

Authors:
; ; ; ;  [1]; ; ; ; ;  [2]
  1. Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)
  2. Open Joint-Stock Company M.F. Stel'makh Polyus Research Institute, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
22551212
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 45; Journal Issue: 7; Other Information: Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ALUMINIUM NITRIDES; BEAM CURRENTS; CURRENT DENSITY; ELECTRON BEAM PUMPING; ELECTRON BEAMS; GALLIUM NITRIDES; INDIUM NITRIDES; KEV RANGE; LASERS; QUANTUM WELLS; TEMPERATURE RANGE 0273-0400 K

Citation Formats

Gamov, N A, Zhdanova, E V, Zverev, M M, Peregudov, D V, Studenov, V B, Mazalov, A V, Kureshov, V A, Sabitov, D R, Padalitsa, A A, and Marmalyuk, A A. Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure. United States: N. p., 2015. Web. doi:10.1070/QE2015V045N07ABEH015780.
Gamov, N A, Zhdanova, E V, Zverev, M M, Peregudov, D V, Studenov, V B, Mazalov, A V, Kureshov, V A, Sabitov, D R, Padalitsa, A A, & Marmalyuk, A A. Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure. United States. https://doi.org/10.1070/QE2015V045N07ABEH015780
Gamov, N A, Zhdanova, E V, Zverev, M M, Peregudov, D V, Studenov, V B, Mazalov, A V, Kureshov, V A, Sabitov, D R, Padalitsa, A A, and Marmalyuk, A A. 2015. "Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure". United States. https://doi.org/10.1070/QE2015V045N07ABEH015780.
@article{osti_22551212,
title = {Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure},
author = {Gamov, N A and Zhdanova, E V and Zverev, M M and Peregudov, D V and Studenov, V B and Mazalov, A V and Kureshov, V A and Sabitov, D R and Padalitsa, A A and Marmalyuk, A A},
abstractNote = {The parameters of pulsed blue-violet (λ ≈ 430 nm at T = 300 K) lasers based on an AlGaN/InGaN/GaN structure with five InGaN quantum wells and transverse electron-beam pumping are studied. At room temperature of the active element, the minimum electron energy was 9 keV and the minimum threshold electron beam current density was 8 A cm{sup -2} at an electron energy of 18 keV. (lasers)},
doi = {10.1070/QE2015V045N07ABEH015780},
url = {https://www.osti.gov/biblio/22551212}, journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 7,
volume = 45,
place = {United States},
year = {Fri Jul 31 00:00:00 EDT 2015},
month = {Fri Jul 31 00:00:00 EDT 2015}
}