{sup 4}H-SiC neutron sensors based on ion implanted {sup 10}B neutron converter layer
- Universite Aix-Marseille, Marseille 13397, (France)
- Karlsruhe Institute of Technology, Institute of Neutron Physics and Reactor Technology, Karlsruhe 76344, (Germany)
- SCK-CEN, B-2400 Mol, (Belgium)
- Laboratoire Dosimetrie Capteurs Instrumentation, CEA, Cadarache 13108, (France)
- University of Oslo, NO-0316 Oslo, (Norway)
- AMPERE, UMR 500, INSA de Lyon, 69621 Villeurbanne, (France)
- KTH, Electrum 229, 16440 Kista, (Sweden)
In the framework of the I{sub S}MART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, {sup 10}B ions have been implanted into the Al metallic contact to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper. (authors)
- Research Organization:
- Institute of Electrical and Electronics Engineers - IEEE, 3 Park Avenue, 17th Floor, New York, N.Y. 10016-5997 (United States)
- OSTI ID:
- 22531207
- Report Number(s):
- ANIMMA-2015-IO-150; TRN: US16V0268102148
- Resource Relation:
- Conference: ANIMMA 2015: 4. International Conference on Advancements in Nuclear Instrumentation Measurement Methods and their Applications, Lisboa (Portugal), 20-24 Apr 2015; Other Information: Country of input: France; 23 Refs.
- Country of Publication:
- United States
- Language:
- English
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