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Title: Semiconducting ZnSn{sub x}Ge{sub 1−x}N{sub 2} alloys prepared by reactive radio-frequency sputtering

We report on the fabrication and structural and optoelectronic characterization of II-IV-nitride ZnSn{sub x}Ge{sub 1−x}N{sub 2} thin-films. Three-target reactive radio-frequency sputtering was used to synthesize non-degenerately doped semiconducting alloys having <10% atomic composition (x = 0.025) of tin. These low-Sn alloys followed the structural and optoelectronic trends of the alloy series. Samples exhibited semiconducting properties, including optical band gaps and increasing in resistivities with temperature. Resistivity vs. temperature measurements indicated that low-Sn alloys were non-degenerately doped, whereas alloys with higher Sn content were degenerately doped. These films show potential for ZnSn{sub x}Ge{sub 1−x}N{sub 2} as tunable semiconductor absorbers for possible use in photovoltaics, light-emitting diodes, or optical sensors.
Authors:
;  [1] ;  [2] ;  [3]
  1. Department of Materials Science, California Institute of Technology, Pasadena, California 91125 (United States)
  2. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125 (United States)
  3. Department of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States)
Publication Date:
OSTI Identifier:
22499270
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 7; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALLOYS; DOPED MATERIALS; LIGHT EMITTING DIODES; PHOTOVOLTAIC EFFECT; SENSORS; SPUTTERING; TEMPERATURE MEASUREMENT; THIN FILMS