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Title: Stress controlled pulsed direct current co-sputtered Al{sub 1−x}Sc{sub x}N as piezoelectric phase for micromechanical sensor applications

Scandium alloyed aluminum nitride (Al{sub 1−x}Sc{sub x}N) thin films were fabricated by reactive pulsed direct current co-sputtering of separate scandium and aluminum targets with x ≤ 0.37. A significant improvement of the clamped transversal piezoelectric response to strain e{sub 31,f} from −1.28 C/m{sup 2} to −3.01 C/m{sup 2} was recorded, while dielectric constant and loss angle remain low. Further, the built-in stress level of Al{sub 1−x}Sc{sub x}N was found to be tuneable by varying pressure, Ar/N{sub 2} ratio, and Sc content. The thus resulting enhancement of the expectable signal to noise ratio by a factor of 2.1 and the ability to control built-in stress make the integration of Al{sub 1−x}Sc{sub x}N as the piezoelectric phase of micro-electro-mechanical system sensor applications highly attractive.
Authors:
 [1] ; ; ;  [1] ;  [2] ;  [3]
  1. Institute of Material Science, Christian-Albrechts-Universität, Kaiserstr. 2, 24143 Kiel (Germany)
  2. (Germany)
  3. Fraunhofer Institute for Silicon Technology, Fraunhoferstr. 1, 25524 Itzehoe (Germany)
Publication Date:
OSTI Identifier:
22499260
Resource Type:
Journal Article
Resource Relation:
Journal Name: APL Materials; Journal Volume: 3; Journal Issue: 11; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; CONTROL; DIRECT CURRENT; PERMITTIVITY; PIEZOELECTRICITY; PULSES; SCANDIUM; SCANDIUM ALLOYS; SENSORS; SIGNAL-TO-NOISE RATIO; SPUTTERING; STRAINS; STRESSES; THIN FILMS